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MG50G1BL2

Toshiba
Part Number MG50G1BL2
Manufacturer Toshiba
Description DARLINGTON POWER MODULE
Published Jul 16, 2018
Detailed Description :1 mmm A1 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. FEATURES . T...
Datasheet PDF File MG50G1BL2 PDF File

MG50G1BL2
MG50G1BL2

Overview
:1 mmm A1 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS.
FEATURES .
The Collector is Isolated from Ground.
.
High DC Current Gain : hFE=100(Min.
) (Ic=50A) .
Low Saturation Voltage : VcE(sat)=2V(Max.
) (Ic=50A) .
High Speed : tf=2/*s(Max.
) (Ic=50A) Unit in mm MAXIMUM RATINGS (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 600 V Collector-Emitter Voltage VCEO(SUS) 450 V t ^P I *f*3 Emitter-Base Voltage Vebo 6V DC ic 50 A Pulse ICP 100 A Base Current IB 3 A cjx 1.
BASE 2.
COLLECTOR 3.
EMITTER Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range Isolation Voltag...


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