NPN Silicon AF Transistor
Description
BC 817-16W
NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W (PNP)
Type BC 817-16W BC 817-25W BC 817-40W BC 818-16W BC 818-25W BC 818-40W
Marking Ordering Code 6As 6Bs 6Cs 6Es 6Fs 6Gs Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 Q62702-C2323 Q62702-C2324
Pin Configuration 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323
Maximum Ratings Parameter Collector-emitter voltage BC 817 W BC 818 W Collector-base voltage BC 817 W BC 818 W Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation, TS = 130°C Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
Symbol
Values 45 25
Unit V
VCEO
VCBO
50 30
VEBO IC ICM IB Ptot Tj Tstg RthJA RthJS
1
5 500 1 100 250 150 - 65 .
.
.
+ 150 ≤ 215 ≤ 80 mA A mA mW °C
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu
Semiconductor Group
Dec-19-1996
BC 817-16W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit
V(BR)CEO
45 25 160 250 350 100 50 100
V
IC = 10 mA, IB = 0 , BC 817 W IC = 10 mA, IB = 0 , BC 818 W
Collector-base breakdown voltage
V(BR)CBO
50 30
IC = 10 µA, IB = 0 , BC 817 W IC = 10 µA, IB = 0 , BC 818 W
Base-emitter breakdown voltage
V(BR)EBO
5
IE = 10 µA, IC = 0
Collector-base cutoff current
ICBO
nA µA nA 100 160 250 60 100 170 250 400 630 V 0.
7 1.
2
VCB = 25 V, TA = 25 °C VCB = 25 V, TA = 150 °C
Emitter cutoff current
IEBO hFE
VEB = 4 V, IC = 0
DC current gain
IC = 100 mA, VCE = 1 V, BC .
.
.
16 W IC = 100 mA, VCE = 1 V, BC .
.
.
25 W IC = 100 mA, VCE = 1 V, BC .
.
.
40 W IC = 300 mA, VCE = 1 V, BC .
.
.
16 W IC = 300 mA, VCE = 1 V, BC .
.
.
25 W IC = 300 mA, VCE = 1 V, BC .
.
.
4...
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