NPN Silicon AF Transistors
Description
BC817, BC818
NPN Silicon AF Transistors
3
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807, BC808 (PNP)
2 1
VPS05161
Type BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Maximum Ratings Parameter
Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
Symbol VCEO VCBO VEBO
BC817 45 50 5 500 1 100 200 330 150
BC818 25 30 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
mA A mA mW °C
-65 .
.
.
150
Thermal Resistance Junction - soldering point1) RthJS
215
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC817, BC818
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V hFE-grp.
16 hFE-grp.
25 hFE-grp.
40 DC current gain 1) IC = 300 mA, VCE = 1 V hFE-grp.
16 hFE-grp.
25 hFE-grp.
40 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VCEsat VBEsat hFE hFE IEBO ICBO ICBO V(BR)CEO typ.
max.
Unit
V 45 25 100 50 100 nA µA nA 100 160 250 160 250 350 250 400 630
BC817 BC818
V(BR)CBO
BC817 BC818
V(BR)EBO
50 30 5 -
60 100 170 -
-
0.
7 1.
2 V
1) Pulse test: t ≤ 300µs, D = 2%
2
Nov-29-2001
BC817, BC818
Electrical Characteristi...
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