Silicon NPN POWER TRANSISTOR - Toshiba
Description
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : .
Output Power : P =6W (Min.
)
( f=175MHz, VCC=12.
5V, Pi=0.
5W )
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC
?C
Tstg
ELECTRICAL CHARACTERISTICS (T a=25 °C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO V (BR)CBO V(BR)CEO v (BR)EBO
DC Current Gain
hFE
Collector Output Capacitance Cob
Output Power
Po
Power Gain Collector Efficiency
G pe
1c
Series Equivalent Input Impedance
Series Equivalent Output Impedance
^in ZOUT
35 18 3.
5
15 175
-65 -175
JEDEC
1.
EMITTER 2.
BASE 3.
EMITTER 4.
COLLECTOR
TOSHIBA
2— 10Q1A
Mounting Kit No.
AC57
Weight : 3.
3g
TEST CONDITION...
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