NPN Epitaxial Silicon Transistor
Description
BD375/377/379
BD375/377/379
Medium Power Linear and Switching Applications
• Complement to BD376, BD378 and BD380 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BD375 : BD377 : BD379
1
TO-126 2.
Collector 3.
Base
1.
Emitter
Value 50 75 100 45 60 80 5 2 3 1 25 150 - 55 ~ 150
Units V V V V V V V A A A W °C °C
VCEO
Collector-Emitter Voltage : BD375 : BD377 : BD379 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
VEBO IC ICP IB PC TJ TSTG
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD375 : BD377 : BD379 Collector-Base Breakdown Voltage Collector Cut-off Current : BD375 : BD377 : BD379 : BD375 : BD377 : BD379 Test Condition IC = 100mA, IB = 0 Min.
45 60 80 50 75 100 2 2 2 100 40 20 375 1 1.
5 50 500 V V ns ns Typ.
Max.
Units V V V V V V µA µA µA µA
BVCBO
IC = 100µA, IE = 0
ICBO
VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.
15A VCE = 2V, IC = 1A IC = 1A, IB = 0.
1A VCE = 2V, IC = 1A VCC = 30V, IC = 0.
5A IB1 = - IB2 = 0.
05A RL = 60Ω
IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF
Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Turn ON Time Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
hFE Classification
Classification hFE1
©2000 Fairchild Semiconductor International
6 40 ~ 100
10 63 ~ 160
16 100 ~ 250
25 150 ~ 375
Rev.
A, February 2000
BD375/377/379
Typical Characteristics
100
500
80
400
hFE, DC CURRENT GAIN
60
300
IC = 20 .
IB
VCE = -2V
VCE(sat)(mV), SATURATION VOLTAGE
40
200
20
100
0 10 100 1000
0 1E-3
0.
01
0.
1
1
IC = 1 0
.
IB
10
IC[mA], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1.
DC current Gain
Figure 2.
Collector-Emitter S...
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