N-Channel Enhancement Mode Power MOSFET
Description
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ncepower.
com
Pb Free Product
NCE5080K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE5080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =50V,ID =80A RDS(ON) <7.
5mΩ @ VGS=10V RDS(ON) <9mΩ @ VGS=4.
5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCE5080K
NCE5080K
TO-252-2L
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-
Absolute Maximum Ratings (TC=25...
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