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BCW30LT1

ON Semiconductor

General Purpose Transistors(PNP Silicon)


BCW30LT1
BCW30LT1

PDF File BCW30LT1 PDF File


Description
BCW30LT1 General Purpose Transistors PNP Silicon http://onsemi.
com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.
0 –100 Unit Vdc Vdc Vdc mAdc 1 BASE COLLECTOR 3 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (1) FR– 5 = 1.
0 0.
75 (2) Alumina = 0.
4 0.
3 Symbol PD 225 1.
8 RθJA PD 556 300 2.
4 RθJA TJ, Tstg 417 –55 to +150 mW/°C °C/W mW mW/°C °C/W °C C2x SOT–23 (TO–236AB) CASE 318 STYLE 6 1 2 Value Unit mW 3 DEVICE MARKING   0.
062 in.
  0.
024 in.
99.
5% alumina.
x = Monthly Date Code ORDERING INFORMATION Device BCW30LT1 Package SOT–23 Shipping 3000 Units/Rail © Semiconductor Components Industries, LLC, 1999 1 November, 1999 – Rev.
0 Publication Order Number: BCW30LT1/D BCW30LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –2.
0 mAdc, IE = 0) Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0) Collector–Base Breakdown Voltage (IC = –10 µAdc, IC = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –32 Vdc, IE = 0) (VCB = –32 Vdc, IE = 0, TA = 100°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO — — –100 –10 nAdc µAdc –32 –32 –32 –5.
0 — — — — Vdc Vdc Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = –2.
0 mAdc, VCE = –5.
0 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.
5 mAdc) Base–Emitter On Voltage (IC = –2.
0 mAdc, VCE = –5.
0 Vdc) hFE 215 VCE(sat) — VBE(on) –0.
6 –0.
75 –0.
3 Vdc 500 — Vdc SMALL–SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = –10 Vdc, f = 1.
0 MHz) Noise Figure (IC = –0.
2 mAdc, VCE = –5.
0 Vdc...



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