NPN Silicon Digital Transistor
Description
BCR148.
.
.
/SEMH2
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR148/F/L3 BCR148T/W
C 3
BCR148S/U SEMH2
C1 6 B2 5 E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07184
1 E1
2 B1
3 C2
EHA07174
Type BCR148 BCR148F BCR148L3 BCR148S BCR148T BCR148U BCR148W SEMH2
Marking WEs WEs WE WEs WEs WEs WEs WE 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
May-17-2004
BCR148.
.
.
/SEMH2
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR148, TS ≤ 102°C BCR148F, TS ≤ 128°C BCR148L3, TS ≤ 135°C BCR148S, T S ≤ 115°C BCR148T, TS ≤ 109°C BCR148U, TS ≤ 118°C BCR148W, TS ≤ 124°C SEMH2, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR148 BCR148F BCR148L3 BCR148S BCR148T BCR148U BCR148W SEMH2
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 50 70 200 250 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 .
.
.
150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 ≤ 300
°C
Unit K/W
2
May-17-2004
BCR148.
.
.
/SEMH2
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 70 0.
8 1 32 0.
9
47 1
100 164 0.
3 1.
5 3 62 1.
1
kΩ
Collector-base cutoff current
VCB = 40 V, IE = 0
nA µA V
Emitter-base...
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