PNP Silicon Transistor
Description
General Purpose Transistors
PNP Silicon
BC807-16L, BC807-25L, BC807-40L
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
−45 −50 −6.
0 −500
V V V mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
PD
(Note 1) TA = 25°C
Derate above 25°C
225
mW
1.
8
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
436
°C/W
Total Device Dissipation Alumina
Substrate, (Note 1) TA = 25°C Derate above 25°C
PD
300
mW
2.
4
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
FR−4 Board, 1 oz.
Cu, 100mm2.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in 99.
5% alumina.
DATA SHEET www.
onsemi.
com
COLLECTOR 3
1 BASE
2 EMITTER
3
1 2
SOT−23 CASE 318 STYLE 6
MARKING DIAGRAM
5xx M G G
1
5xx = Device Code xx = A1, B1, or C
M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 1997
1
March, 2023 − Rev.
17
Publication Order Number: BC807−16LT1/D
BC807−16L, BC807−25L, BC807−40L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = −10 m...
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