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BLS6G2735L-30

Ampleon

S-band LDMOS transistor


BLS6G2735L-30
BLS6G2735L-30

PDF File BLS6G2735L-30 PDF File


Description
BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev.
4 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.
7 GHz to 3.
5 GHz.
Table 1.
Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA.
Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) tr (ns) tf (ns) Typical RF performance in a class-AB production test circuit in band 3.
1 GHz to 3.
5 GHz pulsed RF 3.
1 to 3.
5 32 30 13 50 20 10 Typical RF performance in an application circuit in small band 2.
7 GHz to 3.
3 GHz pulsed RF 2.
7 to 3.
3 32 35 14 50 20 10 Typical RF performance in an application circuit in small band 2.
7 GHz to 3.
5 GHz pulsed RF 2.
7 to 3.
5 32 30 12 47 20 10 1.
2 Features and benefits  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (...



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