40V Complementary MOSFET
Description
General Description
The BPM0405CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs can be used in a wide variety of applications.
Features
N-Channel VDS =40V, ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.
5V
P-Channel VDS =-40V, ID = -7A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.
5V
High power and current handing capability
Typical Application
BPM0405CG
40V Complementary MOSFET
Application
H-bridge Inverters
Ordering Information
N-channel
P-channel
Figure 1.
Schematic Diagram
Part Number
Package
Operating Temperature
Packing Type
BPM0405CG
SOP-8
-40 ℃ to 105 ℃
Tape & Reel 4,000pcs/Reel
Marking
BPM0405 XXXXXY CGXWW
BPM0405CG_EN_DS_Rev.
1.
0
www.
bpsemi.
com BPS Confidential – Customer Use Only
1
BPM0405CG
40V Complementary MOSFET
Pin Configuration and Marking Information
S1 1 G1 2 S2 3 G2 4
BPM0405 XXXXXY CGXWW
8 D1 7 D1 6...
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