NPN Transistor - Power Innovations Limited
Description
BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997
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Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A
C B
SOT-93 PACKAGE (TOP VIEW) 1
q q q
2
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BDV65 Collector-base voltage (IE = 0) BDV65A BDV65B BDV65C BDV65 Collector-emitter voltage (IB = 0) BDV65A BDV65B BDV65C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.
2 mm from case for 10 seconds NOTES: 1.
This value applies for tp ≤ 0.
1 ms, duty cycle ≤ 10% 2.
Derate linearly to 150°C case temperature at the rate of 0.
56 W/°C.
3.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
V EBO IC ICM IB Ptot Ptot Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 120 60 80 100 120 5 12 15 0.
5 125 3.
5 -65 to +150 -65 to +150 260 V A A A W W °C °C °C V V UNIT
PRODUCT
INFORMATION
Information is current as of publication date.
Products conform to specifications in accordance with the terms of Power Innovations standard warranty.
Production processing does not necessarily include testing of all parameters.
1
BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDV65 V (BR)CEO IC = 30 mA IB = 0 (see Note 4) BDV65A BDV65B BDV65C VCB = 30 V ICEO Collector-emitter cut-off current V CB = 40 V V...
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