N-Channel 30V (D-S) MOSFET
Description
ME2306D/ME2306D-G
N-Channel 30V (D-S) MOSFET , ESD Protected
GENERAL DESCRIPTION
The ME2306D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
● RDS(ON)≦31mΩ@VGS=10V ● RDS(ON)≦52mΩ@VGS=4.
5V ● ESD Protected ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Load Switch
e Ordering Information: ME2306D(Pb-free)
ME2306D-G (Green product-Halogen free)...
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