N-Channel 30V (D-S) MOSFET
Description
N-Channel 30V (D-S)MOSFET
ME2306A/ME2306A-G
GENERAL DESCRIPTION
The ME2306A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
● RDS(ON)≦32mΩ@VGS=10V
● RDS(ON)≦38mΩ@VGS=4.
5V
● RDS(ON)≦50mΩ@VGS=2.
5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter
e Ordering Information: ME2306A (Pb-free)...
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