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TC58NYG2S0FBAI4

Part Number	TC58NYG2S0FBAI4
Manufacturer	Toshiba
Description	4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
Published	Mar 10, 2018
Detailed Description	TC58NYG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58NYG2S0FBAI4 PDF File

Overview

TC58NYG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG2S0F is a single 1.
8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.
The device has two 4320-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4320-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes  14 Kbytes: 4320 bytes  64 pages).
The TC58NYG2S0F is a serial-type memory device which utilizes the I/O pins for both address and data inpu...

Similar Datasheet

TC58NYG2S0FBAI4 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM - Toshiba

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