DatasheetsPDF.com

TC58NVG2S3EBAI5

Part Number	TC58NVG2S3EBAI5
Manufacturer	Toshiba
Description	4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
Published	Mar 10, 2018
Detailed Description	TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58NVG2S3EBAI5 PDF File

Overview

TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S3E is a single 3.
3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  64) bytes  64 pages  4096blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes  4 Kbytes: 2112 bytes  64 pages).
The TC58NVG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/...

Similar Datasheet

TC58NVG2S3EBAI5 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)