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TC58NVG1S3EBAI4

Part Number	TC58NVG1S3EBAI4
Manufacturer	Toshiba
Description	2 GBIT (256M x 8-BIT) CMOS NAND E2PROM
Published	Mar 10, 2018
Detailed Description	TC58NVG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58NVG1S3EBAI4 PDF File

Overview

TC58NVG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3E is a single 3.
3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVG1S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/...

Similar Datasheet

TC58NVG1S3EBAI4 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM - Toshiba

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