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TC58NVG2S0FTAI0

Part Number	TC58NVG2S0FTAI0
Manufacturer	Toshiba
Description	4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
Published	Mar 10, 2018
Detailed Description	TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58NVG2S0FTAI0 PDF File

Overview

TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S0F is a single 3.
3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.
The device has two 4320-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4320-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 14 Kbytes: 4320 bytes × 64 pages).
The TC58NVG2S0F is a serial-type memory device which utilizes the I/O pins for both address and data inpu...

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