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TH58BVG2S3HBAI4

Part Number	TH58BVG2S3HBAI4
Manufacturer	Toshiba
Description	4-GBIT (512M x 8-BIT) CMOS NAND E2PROM
Published	Mar 8, 2018
Detailed Description	TH58BVG2S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TH58BVG2S3HBAI4 PDF File

Overview

TH58BVG2S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG2S3HBAI4 is a single 3.
3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  64) bytes  64 pages  4096 blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes  4 Kbytes: 2112 bytes  64 pages).
The TH58BVG2S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and dat...

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TH58BVG2S3HBAI4 4-GBIT (512M x 8-BIT) CMOS NAND E2PROM - Toshiba

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