NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector current from 2 mA to 30mA)
Description
BFR 183W
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.
2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183W RHs Q62702-F1493 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 210 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 56 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
BFR 183W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 15 mA, VCE = 8 V
Semiconductor Group
2
Dec-11-1996
BFR 183W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
AC Characteristics Transition frequency Values typ.
max.
Unit
fT
6 8 0.
46 0.
24 1 -
GHz pF 0.
7 dB 1.
2 2 -
IC = 25 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.
5 V, f = 1 MHz
Noise figure
F
IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.
8 GHz
Power gain
2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.
8 GHz
Transducer gain |S21e|2 15 9 18 11.
5 ...
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