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BFR183W

Siemens Semiconductor Group

NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector current from 2 mA to 30mA)


BFR183W
BFR183W

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Description
BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.
2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183W RHs Q62702-F1493 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 210 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 56 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Dec-11-1996 BFR 183W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFR 183W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
AC Characteristics Transition frequency Values typ.
max.
Unit fT 6 8 0.
46 0.
24 1 - GHz pF 0.
7 dB 1.
2 2 - IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.
5 V, f = 1 MHz Noise figure F IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.
8 GHz Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.
8 GHz Transducer gain |S21e|2 15 9 18 11.
5 ...



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