Silicon NPN Planar RF Transistor
Description
BFR183T/BFR183TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.
Features
D Low noise figure D High power gain
1 1
13 581 94 9280
13 652
13 570
2
3
2
3
BFR183T Marking: RH Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter
BFR183TW Marking: WRH Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 15 10 2 65 5 200 150 –65 to +150 Unit V V V mA mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.
5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
Document Number 86026 Rev.
2, 20-Jan-99
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vishay.
de • FaxBack +1-408-970-5600 1 (4)
BFR183T/BFR183TW
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 15 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 30 mA, IB = 3 mA VCE = 6 V, IC = 5 mA VCE = 8 V, IC = 20 mA Symbol Min ICES ICBO IEBO V(BR)CEO 10 VCEsat hFE 50 hFE 50 Typ Max Unit 100 mA 100 nA 1 mA V 0.
4 V 150
0.
1 90 110
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Test Conditions VCE = 8 V, IC = 15 mA, f = 500 MHz VCE = 8 V, IC = 30 mA, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 M...
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