Dual N-Channel Enhancement Mode Field Effect Transistor
Description
SC8650SGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.
1
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Typ
2.
6 @ VGS=4.
5V
2.
7 @ VGS=4.
0V
12V 10A 2.
9 @ VGS=3.
8V
3.
3 @ VGS=3.
1V
4.
1 @ VGS=2.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP
TOP VIEW
1.
77 0.
04
BOTTOM VIEW
0.
485 0.
80
LAND PATTERN (REFERENCE)
0.
80
43
3.
05 0.
04
8650 Date Code
1.
005 1.
005
0.
8775 0.
8775 0.
6475 0.
8775 0.
8775 0.
6475
52
φ 0.
25 61
Mark area
1-pin index mark S1
0.
35
0.
10 0.
01
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
12
VGSS IS ISP
Gate-Source Voltage Source Current-Continuous c
-Pulsed a c
±8 10 100
PT Total Power Dissipation
2.
5
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
Units V V A A W
°C
Details are subject to change without notice.
1
φ 0.
25
0.
35
PIN 2
Unit : mm
PIN ...
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