Parallel NOR Flash Embedded Memory
Description
512Mb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
M29W512GH70N3E, M29W512GH7AN6E
Features
• Stacked device (two 256Mb die) • Supply voltage
– VCC = 2.
7–3.
6V (program, erase, read) – VCCQ = 1.
65–3.
6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 80ns, 90ns • Commands sensitive to MSB A24 (die selection) • Fast program commands: 32-word (64-byte) write buffer • Enhanced buffered program commands: 256-word • Program time – 16µs per byte/word TYP – Single die program time: 10s with VPPH, 16s with-
out VPPH • Memory organization
– Uniform blocks: 512 main blocks (2 x 256), 128KB or 64KW each
• Program/erase controller – Embedded byte/word program algorithms
• Program/erase suspend and resume capability – Read from any block during a PROGRAM SUSPEND operation – Read or program another block durin...
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