Transient Voltage Suppressor Diode
Description
Features
n RoHS compliant* n Surface Mount SMC package n Standoff Voltage: 5.
0 to 170 volts n Power Dissipation: 3000 watts n Typical temperature coefficient:
DVBR = 0.
1 % x VBR @ 25 °C x DT
Applications
n IEC 61000-4-2 ESD (Min.
Level 4) n IEC 61000-4-4 EFT n IEC 61000-4-5 Surge
SMLJ Transient Voltage Suppressor Diode Series
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC) size format.
The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown Voltage up to 200 V.
Typical fast response times are less than 1.
0 ps for unidirectional devices and less than 5.
0 ps for bidirectional devices from 0 V to Minimum Breakdown Voltage.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away.
Additional Information Click these links for more information:
PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT LIBRARY
Agency Recognition
Description
UL
File Number: E153537
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Value
Minimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2)
Peak Forward Surge Current 8.
3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3)
PPK IFSM
3000 300
Steady State Power Dissipation @ TL = 75 °C
PM(AV)
5.
0
Maximum Instantaneous Forward Voltage @ IPP = 100 A (For Unidirectional Units Only)
SMLJ5.
0A ~ SMLJ90A SMLJ100A ~ SMLJ170A
VF
3.
5 5.
0
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
1.
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
2.
Thermal Resist...
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