N-channel transistor
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
BSS89 N-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b 1998 Apr 24
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed and line transformer drivers.
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.
MAM146
BSS89
PINNING - TO-92 variant PIN 1 2 3 SYMBOL g d s DESCRIPTION gate drain source
handbook, halfpage
d
1 2 3 g
s
Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VGSO ID Ptot RDSon yfs PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) total power dissipation forward transfer admittance Tamb ≤ 25 °C ID = 400 mA; VDS = 25 V drain-source on-state resistance ID = 400 mA; VGS = 10 V open drain CONDITIONS − − − − − 140 MIN.
− − − − 4.
5 350 TYP.
MAX.
200 ±20 300 1 6 − V V mA W Ω mS UNIT
1998 Apr 24
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature Tamb ≤ 25 °C; note 1 open drain CONDITIONS − − − − − −55 − MIN.
MAX.
200 ±20 300 1.
2 1 +150 150
BSS89
UNIT V V mA A W °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 125 UNIT K/W
Note to the Limiting values and Thermal characteristics 1.
Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 10 × 10 mm.
CHARACTERISTICS T...
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