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BUK7524-60

NXP

TrenchMOS transistor Standard level FET


Description
Philips Semiconductors Objective specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended fo...



NXP

BUK7524-60

PDF File BUK7524-60 PDF File


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