Quadruple ESD transient voltage suppressor
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD127
BZA800A-series Quadruple ESD transient voltage suppressor
Preliminary specification 2000 Apr 18
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
FEATURES • ESD rating >8 kV, according to IEC1000-4-2 • SOT353 (SC-88A) surface mount package • Common anode configuration APPLICATIONS • Computers and peripherals • Audio and video equipment • Communication systems • Medical equipment.
DESCRIPTION
handbook, halfpage
BZA800A-series
PINNING PIN 1 2 3 4 5 cathode 1 common anode cathode 2 cathode 3 cathode 4 DESCRIPTION
3
2
1
1
c2 b2
3
Monolithic transient voltage suppressor diode in a five lead SOT353 (SC-88A) package for 4-bit wide ESD transient suppression.
MARKING TYPE NUMBER BZA856A BZA862A BZA868A BZA820A MARKING CODE Z1 Z2 Z3 Z4
c1/e2
2
4 5
b1 e1
4 Top view
5
MAM212
Fig.
1 Simplified outline SOT353 (SC-88A)
2000 Apr 18
2
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL Per diode IZ IF IFSM Ptot PZSM working current continuous forward current total power dissipation non repetitive peak reverse power dissipation BZA856A, BZA862A, BZA868A BZA820A Tstg Tj Notes 1.
DC working current limited by P tot max.
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS all diodes loaded storage temperature junction temperature Ta = 25 °C Ta = 25 °C Ta = 25 °C square pulse; tp = 1 ms; see Fig.
3 − − − − − − PARAMETER CONDITIONS
BZA800A-series
MIN.
MAX.
UNIT
note 1 200 3.
75 335
mA mA A mW
non-repetitive peak forward current tp = 1 ms; square pulse
24 17 +150 150
W W °C °C
−65 −
VALUE 370
UNIT K/W
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF IR PARAMETER forward voltage reverse current BZA856A BZA862A BZA868A BZA820A Tj = 25 °C unless otherwise spec...
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