Dual rectifier diodes ultrafast - NXP
Description
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
FEATURES
• Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab
BYV74F series
SYMBOL
QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V
a1 1 k 2
a2 3
VF ≤ 1.
12 V IO(AV) = 20 A trr ≤ 60 ns SOT199
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYV74F series is supplied in the conventional leaded SOT199 package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 isolated
case
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode.
Storage temperature Operating junction temperature CONDITIONS BYV74F Tmb ≤ 117˚C square wave; δ = 0.
5; Ths ≤ 54 ˚C t = 25 µs; δ = 0.
5; Ths ≤ 54 ˚C t = 10 ms t = 8.
3 ms sinusoidal; with reapplied VRRM(max) -40 MIN.
-300 300 300 300 MAX.
-400 400 400 400 20 30 150 160 150 150 -500 500 500 500 UNIT V V V A A A A ˚C ˚C
Tstg Tj
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.
H.
≤ 65 % ; clean and dustfree MIN.
TYP.
MAX.
2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
1 Neglecting switching and reverse current losses.
September 1998 1 Rev 1.
300
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
THERMAL RESISTANCES
SYMBOL Rth j-hs PARAMETER Thermal resistance junction to heatsink CONDITIONS both diodes conducting with heatsink compound wit...
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