Rectifier diodes ultrafast
Description
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
GENERAL DESCRIPTION
Glass passivated, high efficiency, dual, rectifier diodes in a full pack, plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic.
They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.
BYV72F series
QUICK REFERENCE DATA
SYMBOL VRRM VF IO(AV) trr PARAMETER BYV72FRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time MAX.
100 100 0.
90 20 28 MAX.
150 150 0.
90 20 28 MAX.
200 200 0.
90 20 28 UNIT V V A ns
PINNING - SOT199
PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1 1 k2
1 2 3
a2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Output current (both diodes conducting)2 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave; δ = 0.
5; Ths ≤ 78 ˚C sinusoidal; a = 1.
57; Ths ≤ 78 ˚C t = 25 µs; δ = 0.
5; Ths ≤ 78 ˚C t = 10 ms t = 8.
3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN.
-40 -100 100 100 100 MAX.
-150 150 150 150 20 20 20 30 150 160 112 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C
IO(RMS) IFRM IFSM
I2t Tstg Tj
1 Ths ≤ 125˚C for thermal stability.
2 Neglecting switching and reverse current losses.
October 1994 1 Rev 1.
100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.
H.
≤ 65 % ...
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