Silicon MOSFET
Description
MIP2E9DMY
MOS
(IPD)
■
■
■ Ta = 25°C ± 3°C
VD 700 VC 10 ID 5.2 IDP 7.2 IC 0.1 Tch 150 Tstg −55 ∼ +150
V V A A A °C °C
■
TO-220-A2
1: Control 2: Source 3: Drain
■ : MIP2E9DMY
■
Control 1
Max Duty Clock
Sawtooth
SQ RQ
SQ V-I R Q
: 2010 3
SLB00071BJD
3 Drain MOSFET
2 Source 1
MIP2E9DMY
■ TC = 25°C ± 3°C
PWM /
) *:
* *
fOSC MAXDC GPWM
m
...
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