NPN Transistor
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-23 Plastic-Encapsulate Transistors
M28S TRANSISTOR (NPN)
SOT–23
FEATURES Excellent hFE Linearity High DC Current Gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
20
VEBO Emitter-Base Voltage
6
IC Collector Current
1
PC Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj Junction Temperature Tstg Storage Temperature
150 -55~+150
Unit V V V A
mW ℃/W
℃ ℃
1.
BASE 2.
EMITTER 3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=0.
1mA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=0.
1mA, IC=0
Collector cut-off current
ICBO VCB=35V, IE=0
Collector cut-off current
ICEO VCE=20V, IB=0
Emitter cut-off c...
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