NPN Epitaxial Silicon Transistor
Description
MMBT2222AT — NPN Epitaxial Silicon Transistor
MMBT2222AT
NPN Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
• General purpose switching & amplification application
September 2008
C E
B
Marking : A02
SOT-523F
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
75
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
6
IC Collector Current
600
TJ Junction Temperature
150
TSTG
Storage Temperature Range
-55 ~ 150
* 1.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2.
These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
PC Collector Power Dissipation, by RθJA
RθJA
Thermal Resistance, Junction to Ambient...
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