NPN general purpose transistor
Description
Production specification
NPN general purpose transistor
FEATURES
z High collector current.
z High current gain.
Pb
Lead-free
z Low collector-emitter saturation voltage.
z Complementary types:BC807W,BC808W.
APPLICATIONS
z General purpose switching and amplification application.
ORDERING INFORMATION
Type No.
Marking
BC817-16W BC817-25W BC817-40W BC818-16W BC818-25W BC818-40W
6A 6B 6C 6E 6F 6G
BC817W/BC818W
SOT-323
Package Code SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
BC817W BC818W
50 30
VCEO
Collector-Emitter Voltage
BC817W BC818W
45 25
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
500
ICM Peak Collecter Current
1
IB Base Current
100
IBM Peak Base Current
200
Ptot Total Power Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Units V
V V mA A mA mA mW ℃
F076 Rev.
B
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