Silicon NPN Power Transistors
Description
SavantIC Semiconductor
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Product Specification
2N5632 2N5633 2N5634
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain
APPLICATIONS ·For general-purpose power amplifier
and switching applications
PINNING PIN 1 2 3
DESCRIPTION Base Emitter Collector
Fig.
1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5632
VCBO
Collector-base voltage
2N5633 2N5634
2N5632
VCEO
Collector-emitter voltage 2N5633
2N5634
VEBO IC PD Tj Tstg
Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature
CONDITIONS Open emitter
Open base Open collector TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE 100 120 140 100 120 140 7 10 150 150
-65~200
UNIT V
V V A W
VALUE 1.
1
UNIT /W
SavantIC Semiconductor
Silicon NPN Power Transistors
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Product Specification
2N...
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