GENERAL PURPOSE TRANSISTOR
Description
2N1711
For Specifications, See 2N718A Data.
2N1893
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous -
@Total Device Dissipation Ta = 25°C
Derate above 25°C Total Device Dissipation (S Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol v CEO VCER VCBO VEBO
ic
PD
pd
Tj, Tstg
Value 80 100 120 7.
0 0.
5 0.
8 4.
57 3.
0 17.
2
- 65 to + 200
Unit Vdc Vdc Vdc Vdc
Adc Watt mW/°C Watts mW/°C
°C
Refer to 2N3019 for graphs.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol R&jc R&JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 100 mAdc, RgE = 1° ohms) Collector-Emitter Sustaining Voltaged) (Ic = 30 mAdc, lg = 0) ...
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