SILICON NPN TRANSISTOR
Description
SILICON NPN TRANSISTOR
BFY52
• V(BR)CEO = 20V (Min).
• Hermetic TO-39 Metal Package.
• Ideally Suited General Purpose Amplifier Applications
• Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
40V
VCEO
Collector – Emitter Voltage
20V
VEBO
Emitter – Base Voltage
6V
IC Continuous Collector Current
1.
0A
PD Total Power Dissipation at TA = 25°C
0.
8W
Derate Above 25°C
4.
57mW/°C
PD Total Power Dissipation at TC = 25°C
5W
Derate Above 25°C
28.
6mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Max.
218.
75
35
Units °C/W °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both...
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