SILICON PNP TRANSISTORS
Description
BC177 BC177A BC177B
SILICON PNP TRANSISTORS
w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC177, BC177A, and BC177B are silicon PNP transistors designed for general purpose amplifier applications.
MARKING: FULL PART NUMLBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg JA
50 45 5.
0 100 200 200 300 -65 to +200 583.
3
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
VCB=20V
1.
0
ICBO
VCB=20V, TA=150°C
IEBO
VEB=5.
0V
VCE(SAT) IC=10mA, IB=0.
5mA
75
VCE(SAT) IC=100mA, IB=5.
0mA
250
VBE(SAT) IC=10mA, IB=0.
5mA
730
VBE(SAT) IC=100mA, IB=5.
0mA
850
VBE(ON)
VCE=5.
0V, IC=2.
0mA
600 650
hFE
VCE=5.
0V, IC=2.
0mA (BC177)
125
hFE
VCE=5.
0V, IC=2...
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