GLASS PASSIVATED SILICON RECTIFIERS
Description
1N5550 1N5553 1N5551 1N5554 1N5552
GLASS PASSIVATED SILICON RECTIFIERS 3.
0 AMP, 200 THRU 1000 VOLT
w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general purpose applications where high reliability is required.
MARKING: FULL PART NUMBER
GPR-4AM CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 1N5550 1N5551 1N5552 1N5553 1N5554 UNITS
Peak Repetitive Reverse Voltage
VRRM 200 400 600
800 1000
V
DC Blocking Voltage
VR
200 400 600
800 1000
V
RMS Reverse Voltage
VR(RMS) 140
280
420
560
700
V
Average Forward Current (TA=55°C)
IO
3.
0
A
Peak Forward Surge Current, tp=8.
3ms
IFSM
100
A
Operating and Storage Junction Temperature TJ, Tstg
-65 to +200
°C
Thermal Resistance (Note 1)
ΘJL
30
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=Rated VRRM 1.
0
IR
VR=Rated VRRM, TA=100°C 75
VF
IF=3.
0A (200V thru 600V)
1.
0
VF
IF=3.
0A (800V thru 1000V)
1.
1
BVR
IR=50µA (1N5550)
240
BVR
IR=50µA (1N5551)
460
BVR
IR=50µA (1N5552)
660
BVR
IR=50µA (1N5553)
880
BVR
IR=50µA (1N5554)
1100
trr
IF=0.
5A, IR=1.
0A, Irr=0.
25A (200V thru 600V)
2.
0
trr
IF=0.
5A, IR=1.
0A, Irr=0.
25A (800V thru 1000V)
4.
0
Notes: (1) At 0.
375 inch (9.
52mm) lead length from body.
UNITS µA µA V V V V V V V µs µs
R3 (17-April 2023)
1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.
0 AMP, 200 THRU 1000 VOLT
GPR-4AM CASE - MECHANICAL OUTLINE
Notes: (2) Solder fillets may or may not be present at one or both leads where leads attach to the package body.
w w w.
c e n t r a l s e m i .
c o m
R3 (17-April 2023)
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