Dual Enhancement Mode MOSFET
Description
Dual Enhancement Mode MOSFET
HCT802, HCT802TX, HCT802TXV
Features: 6 pad surface mount package VDS = 90V RDS(on) < 5Ω ID(on) N-Channel = 1.5A | P-Channel = 1.1A Two devices selected for VDS ID(on) and RDS(on) similarity Full TX Processing Available Gold plated contacts
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor...
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