N-Channel MOSFET
Description
BYD Microelectronics Co.
, Ltd.
BF91404
40V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
It is also intended for any applications with low gate drive requirements.
Features
z VDS =40V z ID =100A z Typical RDS(ON) =2.
5m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
Drain Current(continuous)at Tc=25℃ ID Drain Current(continuous)at Tc=100℃
IDM
Drain Current (package limited) （Note1）
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
PD
Power Dissipation (TC = 25°C) Power Dissipation (TC =100°C)
TJ,Tstg TL
Operating junction and Storage Temperature Rang...
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