N-Channel MOSFET
Description
BYD Microelectronics Co.
, Ltd.
BF960NF06
60V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
It is also intended for any application with low gate drive requirement.
Features
z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD Power Dissipation (TC = 25°C)
TJ,Tstg TL
Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose
（Note1）
（Note2） （Note1）
Value 60 60 240 ±20 215 38 138
-55 to ...
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