N-Channel MOSFET
Description
CED540N/CEU540N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 25A, RDS(ON) = 53mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
100
±20
25 100 56 0.
45
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.
2 50
Units V V A A W
W/ C C
Units C/W C/W
Specification and data are subject to change without notice .
1
Rev .
4 2008.
Oct.
http://www.
cetsemi.
com
CED540N/CEU540N
Electrical ...
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