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S29GL064S

64 Mbit (8 Mbyte) 3.0 V Flash Memory

Description

S29GL064S 64 Mbit (8 Mbyte) 3.0 V Flash Memory Distinctive Characteristics  CMOS 3.0 Volt Core with Versatile I/O Architectural Advantages  Single Power Supply Operation  Manufactured on 65 nm MirrorBit Process Technology  Secure SiliconRegion – 128-word / 256-byte sector for permanent, secure identification through an 8-word / 16-byte random Electroni...

Cypress Semiconductor

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