N-Channel Enhancement Mode Power MOS FET
Description
MSN0880M
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.
5mΩ）
● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
PIN Configuration
Marking and pin assignment
TO-263-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0880M
MSN0880M
TO-263-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Cont...
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