Power MOSFET
Description
www.
vishay.
com
IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
-60 VGS = -10 V
34 9.
9 16 Single
0.
14
TO-220 FULLPAK
S
G
GDS
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES
• Isolated package
• High voltage isolation = 2.
5 kVRMS (t = 60 s; f = 60 Hz)
Available
• Sink to lead creepage distance = 4.
8 mm • P-channel
Available
• 175 °C operating temperature
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the desig...
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