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TC554101J-20

Part Number	TC554101J-20
Manufacturer	Toshiba
Description	4-Bit Separate I/O CMOS SRAM
Published	Feb 18, 2017
Detailed Description	TOSHIBA 112554101]-20/25/30 SILICON GATE CMOS 1,048,576 WORD x 4 BIT SEPARATE 1/0 CMOS STATIC RAM PRELIMINARY Descri...
Datasheet	TC554101J-20 PDF File

Overview

TOSHIBA 112554101]-20/25/30 SILICON GATE CMOS 1,048,576 WORD x 4 BIT SEPARATE 1/0 CMOS STATIC RAM PRELIMINARY Description The TC5541 01 J is a 4,194,304 bit high speed CMOS static random access memory organized as 1,048,576 words by 4 bits and operated from a single 5V supply.
Toshiba's advanced CMOS technology and circuit design enable hi~peed operation.
The TC5541 01 J features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access.
The TC5541 01 J is suitable for use in applications where high speed is required such as cache memory, high speed storage, and main memory.
All inputs and outputs are TTL compat...

Similar Datasheet

TC554101J-20 4-Bit Separate I/O CMOS SRAM - Toshiba
TC554101J-25 4-Bit Separate I/O CMOS SRAM - Toshiba
TC554101J-30 4-Bit Separate I/O CMOS SRAM - Toshiba

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