SILICON GATE CMOS PSEUDO STATIC RAM
Description
TOSHIBA
SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM
1l:51864PL/FL~5/10
PRELIMINARY
Description
The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits.
The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.
The TC51864PL operates from a single 5V power supply.
Refreshing is supported by a refresh (RFSH) input which enables two types of refreshing - auto refresh and self refresh.
The TC51864PL features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface.
The TC51864PL is available in a 32-pin, 0.
6 inch width plastic DIP, and a small outline plastic flat package.
Features • Organization: 65,536 words x 8 bits • Single 5V power supply • Fast access time
TC51864 Family
-85 -10
tCEA CE Access Time tOEA OE ...
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