SILICON GATE CMOS PSEUDO STATIC RAM
Description
rOSHIBA
SILICON GATE CMOS
TC51V8512AF/ AFT/ A1R-12/15
PRELIMINARY
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.
The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage.
The TC51 V8512AF operates from a single 3.
0V power supply.
Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - auto refresh and self refresh.
The TC51V8512AF features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface.
The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type, reverse type).
Features • Organization: 524,288 words x 8 bits • Low voltage function: 3.
0V±10% • Data re...
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