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TC518512FTL-10LV

Toshiba

SILICON GATE CMOS PSEUDO STATIC RAM


TC518512FTL-10LV
TC518512FTL-10LV

PDF File TC518512FTL-10LV PDF File


Description
TOSHIBA TC518512PL/FL/FIL!fRL70LV/80LV/I0LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.
The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed ar}QJow power storage.
The TC518512PL-LVoperates from a single 3.
0V - 5.
5V power supply.
Refreshing is supported by a refresh (05'RFSH) input which enables two types of refreshing - auto refresh and self refresh.
The TC518512PL features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface.
The TC518512PL is available in a 32-pin, 0.
6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline package (forward type, reverse type).
Features • Organization: 524,288 words x 8 bits • Low voltage op...



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