N-Channel MOSFET
Description
NIKO-SEM
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PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.
75Ω
ID 10A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2 Avalanche Current 3 Avalanche Energy3
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM IAS EAS
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
1 23
1.
GATE 2.
DRAIN 3.
SOURCE
100% UIS tested
LIMITS 600 ±30 10 6 30 3.
5 61 39 15
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed 3VDD = 100V , L = 10mH, starting TJ = 25˚C
TYPICAL
MAXIMUM 3.
2 62.
5
UNITS °C / W
ELECTRICAL CHARAC...
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